QDGF-Q10

QDGF-Q10

D50:12.0±3.0μm, SiO₂≥99.6%, spheroidization rate ≥90%, whiteness ≥90. S.S.A.1.0±0.3m²/g, electrical conductivity ≤5μS/cm. Low impurities, low conductivity, good magnetic foreign body index and high filling performance.

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  • Mainly used as filler for epoxy molding compound and copper clad laminate
  • applied in electronic encapsulation
  • CCL and electronic insulating composite materials.