QDGF-J05

99.99% SiO₂ content with strictly controlled impurities of Al, Fe, Na⁺ and Cl⁻. D50=5.2μm with fine particle size and narrow distribution. Mohs hardness 7.0, dielectric constant 4.6, low dielectric loss, low linear expansion coefficient and excellent thermal conductivity. It features good chemical stability, ideal for electronics, semiconductor and optical‑fiber encapsulation requiring high purity and fine particle size.